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K4X56163PG-FE Datasheet, Samsung semiconductor

K4X56163PG-FE sdram equivalent, 16m x16 mobile-ddr sdram.

K4X56163PG-FE Avg. rating / M : 1.0 rating-12

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K4X56163PG-FE Datasheet

Features and benefits

Mobile-DDR SDRAM
* 1.8V power supply, 1.8V I/O power
* Double-data-rate architecture; two data transfers per clock cycle
* Bidirectional data strobe(DQS)

Application

where Product failure could result in loss of life or personal or physical harm, or any military or defense application,.

Description

SYMBOL CK, CK TYPE Input DESCRIPTION Mobile-DDR SDRAM Clock : CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK. Internal clock signals are .

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TAGS

K4X56163PG-FE
16M
x16
Mobile-DDR
SDRAM
K4X56163PG-FG
K4X56163PG-LE
K4X56163PG-LG
Samsung semiconductor

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